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| an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O.O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo.o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, V,,=O.O V v, v,,=o.o v Test Conditions Leakage Current LeakageCurrent `DSS `GSS V GSITHI GM C ISS C ass %s GP % VSWR-T 13 60 2.0 2.0 Gate Threshold Voltage ForwardTransconductance InputCapacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance 6.0 180 160 32 3O:l V, 1,,=400.0 mA V, 1,,=4.0 A, AV,,=l V, F=l .O MHz V, F=l .O MHz V, F=l .O MHz V, I,,=400 V. I,,=400 V, I,,=400 mA, P,,=80.0 mA, P,,=80.0 W, F=175 MHz W, F=175 MHz .O V, 80 us Pulse mA, P,,,r=80.0 W, F=175 MHz Specifications Subject to Change Without Notice. M/A-COM, North America: Tel. (BOO) 366-2266 Fax (800) 618-8883 n inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 8OW, 28V DU2880T v2.00 Typical Broadband Performance Curves EFFICIENCY V,,=28 vs FREQUENCY mA PO,,=80 W 25 I GAIN vs FREQUENCY V,,=28 V I,,=400 mA P,,,=80 W V I,,=400 50s 25 10 50 100 FREQUENCY (MHz) 150 175 25 50 100 FREQUENCY (MHz) 150 175 POWER OUTPUT vs POWER INPUT V,,=28 120 r 100 s 5 e 80 POWER OUTPUT I,,=400 I 120 loo 5 80. vs SUPPLY VOLTAGE V I,,=400 mA mA F=175 MHz P,,=3.0 W f$ 60 40 20 0 1 3 2 B I 13 15 20 SUPPLY VOLTAGE 25 (V) 30 33 0.1 0.2 0.3 1 2 3 4 5 POWER INPUT(W) Specifications Subject !o Change Without Notrce. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 D Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 8OW, 28V DU2880T v2.00 Typical Device Impedance Frequency (MHz) 30 50 100 175 Z,, (OHMS) 5.4 - j 4.4 2.5 - j 4.4 l.S-j3.4 0.7 - j 1.2 V,,=28 V, I,,=400 mA, P,,,.=80 Watts Z LOAD (OHMS) 5.7 + j 4.7 3.4 + j 3.5 2.4 + j 2.4 1.7 + j 0.8 Z,, is the se+ equivalent input impedance of the device from gate to source. Z LOAD the optimum series equivalent load impedance as measured from drain to ground. is RF Test Fixture VGS J3 VDS J4 VDS = 2s VOLTS IW=4oomA R2 1 Cl2 PARTS LIST TRIMMER CAPACITOR CAPACITOR MONOLITHIC TRIMMER CAPACITOR CAPACITOR 5@F 10oD~F CIRCUIT 4-4opF 35. -! IC" L4 RF OUT RF IN Jl Cl Cl ,c3 c2.c9,c10 CGl C5 c&c9 C7 Cl2 Ll L2 W.L4 1 CAPACITOR S-~BOPF 0.01 UF CAPACITOR 15pF ELECTROLYTIC CAPACITOR 5&F 50 VOLT NO. 12 AWG COPPER WIRE X 1.18' (LOOP 0.5') NO, 12 AWG COPPER WIRE X 1' (LOOP 0.4') 8 TURNS OF NO. 18 AWG ENAMEL WIRE ON Y).25-. CLOSE WOUND Rl I%? Cl BOARD RESISTOR RESISTOR DU2BBOT FR4 o.os2 300 OHMS 0.5 WATT 27K OHMS 0.25 WAlT Specifications Subject to Change Without Notice. WA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03)3226-1671 Fax +81 (03)3226-1451 n Europe: Tel. +44 (1344)869 595 Fax +44(1344)300 020 |
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